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SN4002 11N80C 7473N IN3260 001547 ELECTRON MB91F MAX7421
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  maximum ratings and electrical characteristics ratings at 25 o c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20%. 1n5221b thru do-35 dimensions in millimeters rectifier specialists r dc components co., l td. 0.52? 2.0max 25.0min 4.2max 25.0min technical specifica tions of glass silicon zener diodes features * voltage range:2.4v to 39v mechanical data * case: glass sealed case * lead: mil-std-202e, method 208 guaranteed * polarity: color band denotes cathode end * mounting position: any * weight: 0.13 gram * double slug type construction 1n5259b symbol value units zener current see table "characterisitics" power dissipation at t amb=25 o c ptot 500 (1) mw junction t emperature tj 175 o c storage t emperature range t stg -55 to + 175 o c k/mw thermal resistance rtha - t yp. junction to ambient air - min. 0.3 (1) max. volts forward voltage v f - typ. at if=100ma - min. 1 max. 1)valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. note: suffix "b" indicates zener voltage tolerance 5% 160
rating and characteristic curves (1n5221b thru 1n5259b) nominal zener voltage v z@ i zt volts zener test current i zt ma maximum zener impedance z zt@ i zt z zt@ i zk ( ) ohms ohms. maximum reverse leakage current i r @ v r ua volts typical temperature coefficient % / o c maximum regulator current i zm ma 1n5221b 2.4 20 30 1200 -0.085 100 1.0 191 1n5222b 2.5 20 30 1250 -0.085 100 1.0 182 1n5223b 2.7 20 30 1300 -0.080 75 1.0 168 1N5224B 2.8 20 30 1400 -0.080 75 1.0 162 1n5225b 3.0 20 29 1600 +0.075 50 1.0 151 1n5226b 3.3 20 28 1600 -0.070 25 1.0 138 1n5227b 3.6 20 24 1700 -0.065 15 1.0 126 1n5228b 3.9 20 23 1900 -0.060 10 1.0 115 1n5229b 4.3 20 22 2000 0.055 5.0 1.0 106 1n5230b 4.7 20 19 1900 0.030 5.0 2.0 97 1n5231b 5.1 20 17 1600 0.030 5.0 2.0 89 1n5232b 5.6 20 11 1600 +0.038 5.0 3.0 81 1n5233b 6.0 20 7 1600 +0.038 5.0 3.5 76 1n5234b 6.2 20 7 1000 +0.045 5.0 4.0 73 1n5235b 6.8 20 5 750 +0.050 3.0 5.0 67 1n5236b 7.5 20 6 500 +0.058 3.0 6.0 61 1n5237b 8.2 20 8 500 +0.062 3.0 6.5 55 1n5238b 8.7 20 8 600 +0.065 3.0 6.5 52 1n5239b 9.1 20 10 600 +0.068 3.0 7.0 50 1n5240b 10 20 17 600 +0.075 3.0 8.0 45 1n5241b 11 20 22 600 +0.076 2.0 8.4 41 1n5242b 12 20 30 600 +0.077 1.0 9.1 38 1n5243b 13 9.5 13 600 +0.079 0.5 9.9 35 1n5244b 14 9.0 15 600 +0.082 0.1 10 32 1n5245b 15 8.5 16 600 +0.082 0.1 11 30 1n5246b 16 7.8 17 600 +0.083 0.1 12 28 1n5247b 17 7.4 19 600 +0.084 0.1 13 27 1n5248b 18 7.0 21 600 +0.085 0.1 14 25 1n5249b 19 6.6 23 600 +0.085 0.1 14 24 1n5250b 20 6.2 25 600 +0.086 0.1 15 23 1n5251b 22 5.6 29 600 +0.087 0.1 17 21.2 1n5252b 24 5.2 33 600 +0.088 0.1 18 19.1 1n5253b 25 5.0 35 600 +0.089 0.1 19 18.2 1n5254b 27 4.6 41 600 +0.090 0.1 21 16.8 1n5255b 28 4.5 44 600 +0.091 0.1 21 16.2 1n5256b 30 4.2 49 600 +0.091 0.1 23 15.1 1n5257b 33 3.8 58 700 +0.092 0.1 25 13.8 1n5258b 36 3.4 70 700 +0.093 0.1 27 12.6 1n5259b 39 3.2 80 800 +0.094 0.1 30 11.5 breakdown characteristics 1n52-series ma 50 40 30 20 10 0 5v 10v 15v 20v 25v 30v iz vz 1n5252 1n5250 1n5245 1n5242 1n5241 1n5239 1n5235 1n5234 1n5232 1n5231 1n5230 1n5229 1n5228 1n5224 test current iz 20ma changes in the power dissipation due to the ambient temperature. 500 400 300 200 100 pd(mw) t a( o c) 50 100 150 200 300 ambient temperature. power dissipation ( )izk=0.25ma 161 r dc components co., l td.


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